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this is information on a product in full production. september 2013 docid024372 rev 2 1/16 16 STD25NF20 automotive-grade n-channel 200 v, 0.10 typ., 18 a stripfet? low gate charge power mosfet in a dpak package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? extremely low gate charge ? exceptional dv/dt capability ? low gate input resistance ? 100% avalanche tested applications ? switching applications description this n-channel enhancement mode power mosfet benefits from the latest refinement of stmicroelectronics' unique ?single feature size? strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. the result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. dpak 1 3 tab $0y '7$% * 6 order code v ds @ t jmax r ds(on) max i d p tot STD25NF20 200 v 0.125 18 a 110 w table 1. device summary order code marking package packaging STD25NF20 25nf20 dpak tape and reel www.st.com
contents STD25NF20 2/16 docid024372 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid024372 rev 2 3/16 STD25NF20 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 200 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according to r thj-case. drain current (continuous) at t c = 25 c 18 a i d (1) drain current (continuous) at t c = 100 c 11 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 72 a p tot total dissipation at t c = 25 c 110 w derating factor 0.72 w/c dv/dt (3) 3. i sd 18 a, di/dt 200 a/s; v ds peak < v (br)dss , v dd = 400 v. peak diode recovery voltage slope 15 v/ns t stg storage temperature -55 to 175 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1.38 c/w r thj-amb thermal resistance junction-ambient max 50 (1) 1. when mounted on 1 inch 2 fr-4, 2 oz copper board c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetitive (pulse width limited by t jmax ) 18 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 110 mj
electrical characteristics STD25NF20 4/16 docid024372 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = 200 v 1 a v ds = 200 v, t c =125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 10 a 0.10 0.125 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 940 pf c oss output capacitance - 197 pf c rss reverse transfer capacitance -30 pf q g total gate charge v dd = 160 v, i d = 20 a, v gs = 10 v (see figure 13 ) -2839nc q gs gate-source charge - 5.6 nc q gd gate-drain charge - 14.5 nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d (on) turn-on delay time v dd = 100 v, i d = 10 a, r g = 4.7 , v gs = 10 v (see figure 14 and figure 17 ) -15-ns t r (v) voltage rise time - 30 - ns t d (off) turn-off-delay time - 40 - ns t f (i) fall time - 10 - ns
docid024372 rev 2 5/16 STD25NF20 electrical characteristics table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 18 72 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 20 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 27 a, di/dt = 100 a/s v dd = 60 v (see figure 17 ) - 155 ns q rr reverse recovery charge - 775 nc i rrm reverse recovery current - 10 a t rr reverse recovery time i sd = 27 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 17 ) - 183 ns q rr reverse recovery charge - 1061 nc i rrm reverse recovery current - 11.6 a
electrical characteristics STD25NF20 6/16 docid024372 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=175c tc=25c single pulse am15627v1 i d 100 0 0 10 v ds (v) (a) 5 15 v gs = 4 v v gs = 5 v v gs = 6 v v gs = 7 v 50 150 v gs = 8 v v gs = 9 v v gs = 10 v 200 250 am15628v1 i d 30 20 10 0 0 4 v gs (v) (a) 2 6 8 40 am15629v1
docid024372 rev 2 7/16 STD25NF20 electrical characteristics figure 8. capacitance variations figure 9. source-drain diode forward characteristics figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature v sd 3 9 i sd (a) (v) 6 18 12 15 0.5 0.6 0.7 0.8 0.9 t j =-50c t j =25c t j =175c am03982v1 v gs(th) 0.90 0.60 0.50 0.40 -50 0 t j (c) (norm) 1.10 50 100 150 0.70 0.80 1.00 am03980v1 r ds(on) 2.4 1.0 0.6 -50 0 t j (c) (norm) 50 100 150 0.8 1.6 1.2 1.4 2.2 1.8 2.0 am03981v1
test circuits STD25NF20 8/16 docid024372 rev 2 3 test circuits figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive waveform figure 17. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid024372 rev 2 9/16 STD25NF20 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STD25NF20 10/16 docid024372 rev 2 table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
docid024372 rev 2 11/16 STD25NF20 package mechanical data figure 18. dpak (to-252) drawing 0068772_k
package mechanical data STD25NF20 12/16 docid024372 rev 2 figure 19. dpak footprint (a) a. all dimensions are in millimeters footprint_rev_k
docid024372 rev 2 13/16 STD25NF20 packaging mechanical data 5 packaging mechanical data table 10. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
packaging mechanical data STD25NF20 14/16 docid024372 rev 2 figure 20. tape for dpak (to-252) figure 21. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
docid024372 rev 2 15/16 STD25NF20 revision history 6 revision history table 11. document revision history date revision changes 12-mar-2013 1 first release. 03-sep-2013 2 ? modified: title and features in cover page ? modified: figure 12 , 13 , 14 and 15 ? minor text changes
STD25NF20 16/16 docid024372 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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